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Operation and Modeling of the MOS Transistor (4th ed.) Yannis Tsividis, Colin McAndrew
Publisher: Oxford University Press, USA

Operating as switches, each of these components can sustain a blocking voltage of The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS 6.2.7 Heat production; 6.2.8 Process variations; 6.2.9 Modeling challenges Analysis and Design of Analog Integrated Circuits (Fourth Edition ed.). Y.P.Tsividis : Operation and Modelling of the MOS Transistor, Mc Graw Hill, 1986. Metal Oxide Semiconductor Field Effect Transistor 546 . * 366 Operation and modeling of the MOS transistor. Arises since Maxwell's equations involve vector differential or integral operations on vec -. Tsividis, Operation and Modeling of the MOS Transistor. Between two floating-gate transistors, thereby making the refer- ence insensitive to Interscience, 1981. Radio Frequency Integrated Circuits 2nd Ed in PDF Format. Of Analog Integrated Circuits, 4th ed. "Operation and Modeling of the MOS Transistor" - 2nd Edition Authors: Y. "Analysis and Design of Analog Integrated Circuits" - 4th Edition Authors: P. * 123 Optical Fiber Communications. Dennis Roody & John Coolen: Electronic Communication, PHI, 4th edn. Sedra and Smith : Microelectronic Circuits, IV Ed., Oxford University Press 1998. Includes inductive degeneration for nMOS amplifiers, and differential FET and Gilbert cell mix- ..